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Sankaranarayanan, P. E.
- Role of Multi Agents in Wireless Sensor Network for Event Detection
Authors
1 Electronics and Communication Engineering Department, Sathyabama University, Chennai 600 119, IN
2 Sathyabama University, Chennai 600 119, IN
Source
Wireless Communication, Vol 2, No 10 (2010), Pagination: 393-398Abstract
This paper focuses on developing the multi agent systems in wireless sensor networks(wsn) to detect the yarn breakages(event) in spinning machine in textile industry. The multiagent system interconnects separately developed mobile agents, thus enabling the function beyond the capabilities of any singular mobile agent in the system. In our application, the sensor nodes are deployed to monitor the break in the yarn. These nodes are formed into many clusters and cluster head is chosen randomly in each cluster. Any break in the yarn detected by the sensor nodes in each cluster is informed to the cluster head. The information obtained by the system must be managed by the agents attached to the cluster heads which provides an adequate interaction between users and their environment. In the proposed system, wsn platform is integrated with the agent based clustering architecture. The cluster head agents carry the information to the end user through base station. The technique proposed has been simulated for research study and the results obtained have been shown in respect of time of detection of yarn breakage.
Keywords
Cluster, Multi Agent Systems, Sensor Network, Yarn Break.
- Enhanced Optical Effect on the Characteristics of MODFET under Back Side Illumination
Authors
1 Sathyabama University, Chennai-600118, Tamilnadu, IN
2 St.Josephs Engineering College, Chennai-600118, Tamilnadu, IN
Source
Programmable Device Circuits and Systems, Vol 3, No 7 (2011), Pagination: 348-353Abstract
The DC performance of depletion mode AlGaAs/GaAs MODFET under backside optical illumination is studied. A device structure with fiber inserted into the substrate upto the GaAs layer is considered for direct illumination into the GaAs layer. The AlGaAs layer is considered transparent to illumination. The photoconductive effect and the internal reflection effect which increase the 2DEG channel electron concentration are considered. These free electrons generated in the GaAs layer due to both photoconductive effect and the internal reflection effect are collected in 2DEG, there by increasing the source to drain current. The photo generated holes in GaAs layer drift towards the semi-insulating substrate and are capacitively coupled into the grounded source. The sheet concentration , I-V characteristics, transconductance and transfer characteristics of the device AlGaAs/GaAs MODFET have been evaluated and discussed. The I-V characteristics is compared with available experimental data at a particular gate source voltage with and without illumination.